The internal structure of the single tube module is composed of several IGBT modules connected in parallel to achieve the required current specification, which can be regarded as a single tube of IGBT module with large current specification. Due to the limitation of mechanical strength and thermal resistance, the area of IGBT module can not be too large. IGBT module with large current specification needs to install multiple chips on a metal substrate. The equivalent circuit on the external label of the single transistor module is shown in Figure 1 below. The secondary emitter (the second emitter) is connected to the grid drive circuit, and the main emitter is connected to the main circuit.
Figure 1 equivalent circuit of internal structure of single tube module
When multiple chips are connected in parallel, the grid resistance has been added to the grid. The main equivalent circuit is shown in Figure 2. The resistance of the first mock exam is not the same as that of the various manufacturers, but the resistance of the same structure is the same.
Figure 2 main equivalent circuit diagram of internal structure of single tube module
In the first mock exam, the IGBT module is called 1IN1 module. The front 1 IGBT contains 1 IGBT modules, and the latter is the same module.
The above is the introduction of a unit IGBT module by inheritance electronics designer. Inheritance electronics is a power semiconductor module manufacturer with power electronics technology as its professional field. It supplies the formulation, manufacturing and processing of power semiconductor modules for enterprises and companies. In addition, it also supplies the OEM production or OEM processing business for companies. The main products are: IGBT module, thyristor (thyristor) module, ultra fast recovery epitaxial diode module, single-phase rectifier bridge module, three-phase rectifier bridge module, rectifier diode module, Schottky diode module and other power semiconductor components.